Volume 13, number 4
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Effect of Femtosecond Laser Radiation on the Structure and Conductivity of Boron Doped Amorphous Hydrogenated Silicon

Ksenia Nikolaevna Denisova, Nastasiya Pavlovna Fantina, Alexander Sergeevich Ilin, Mikhail Nikolaevich Martyshov and Alexander Sergeevich Vorontsov

Physics Department, Lomonosov Moscow State University Leninskie Gory 1-2, Moscow, 119991, Russia.

DOI : http://dx.doi.org/10.13005/bbra/2406

ABSTRACT: The comparative analysis of the influence of femtosecond laser radiation on the structure and conductivity of undoped and boron-doped amorphous hydrogenated silicon was made in this paper. It has been found that the process of nanocrystals formation in an amorphous matrix by femtosecond laser radiation for undoped amorphous hydrogenated silicon samples begins at lower laser energy densities than for doped samples. Different conductivity of undoped and doped samples of amorphous hydrogenated silicon before femtosecond radiation becomes approximately equal upon radiation with laser fluence of 150-160 mJ/ cm2.

KEYWORDS: amorphous hydrogenated silicon; femtosecond laser crystallization; Raman spectroscopy

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Denisova K. N, Fantina N. P, Ilin A. S, Martyshov M. N, Vorontsov A. S. Effect of Femtosecond Laser Radiation on the Structure and Conductivity of Boron Doped Amorphous Hydrogenated Silicon. Biosci Biotech Res Asia 2016;13(4).
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Denisova K. N, Fantina N. P, Ilin A. S, Martyshov M. N, Vorontsov A. S. Effect of Femtosecond Laser Radiation on the Structure and Conductivity of Boron Doped Amorphous Hydrogenated Silicon. Biosci Biotech Res Asia 2016;13(4). Available from: https://www.biotech-asia.org/?p=17450

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