Volume 15, number 2
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Simulation of a Gan-Based Optical Diode with Sapphire Sub-Layer Which is Shaped Patterned Hemisphere, using Poynting Vector Analysis

Marjan Abbasi

M. A. student of physics, solid state, payamenoor Tahran East, Iran Tehran.

Corresponding Author E-mail: marjanabasi796@gmail.com

DOI : http://dx.doi.org/10.13005/bbra/2635

ABSTRACT: Creating light source has always been an interesting matter in the field of optical devices. One of the activities in this field is the effort to build optical diodes and High-efficiency lasers. The aim of this study was to use GaN-based diode lasers with Shaped patterned hemisphere algorithm using Poynting vector analysis can cause modification in output light efficiency. In this article we get to know with time-based finite difference method as one of the analyzing and electromagnetic equations solving and also check out parsing method and data analysis by using APSYS simulator. Results of simulation not only infer that PSS can decrease reflexive angle in the form of hemisphere, but also increase the Transmission angle and all this so that light reflection on it to be increased, moreover, increasing cone in its formula causes increase in light performance.

KEYWORDS: Diode Simulation; GaN-Based Diode Lasers; Patterned Hemisphere; Pointing; Sapphire Layer

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Abbasi M. Simulation of a Gan-Based Optical Diode with Sapphire Sub-Layer Which is Shaped Patterned Hemisphere, using Poynting Vector Analysis. Biosci Biotech Res Asia 2018;15(2).
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Abbasi M. Simulation of a Gan-Based Optical Diode with Sapphire Sub-Layer Which is Shaped Patterned Hemisphere, using Poynting Vector Analysis. Biosci Biotech Res Asia 2018;15(2). Available from: https://www.biotech-asia.org/?p=30099

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